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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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voltage in the order of <math> 10^6 </math>
voltage in the order of <math> 10^6 </math>


Danchip have one [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD furnace]] for deposition of TEOS: The furnace was installed in 1995 and can handle 4" wafers. It is furthermore possible to dope the TEOS with either Boron or phosperoues Please, be aware that it is not allowed to deposit low stress nitride i the new nitride furnace (to avoid problems with particles).
Danchip have one [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD furnace]] for deposition of TEOS: The furnace was installed in 1995 and can handle 4" wafers. It is furthermore possible to dope the TEOS with either Boron or phosphorous.  


On the new LPCVD nitride furnace there are two standard processes for deposition of stoichiometric nitride, one for 4" wafers called "4NITDAN" and one for 6" wafers called "6NITDAN". The old LPCVD nitride furnace is mainly dedicated for deposition of low stress nitride, which does affect the cleanliness of the furnace, but stoichiometric nitride can also be deposited in the furnace. On this furnace the process for stoichiometric nitride is called "NITRIDE", and the process for low stress nitride (silicon rich nitride) is called "SIRICH"
TEOS is Tetra-Ethyl-Ortho-Silicate, it is also sometimes referred to as Tetra-Ethoxy-Silane. The difference between TEOS and Silane is essentially that is TEOS the silicon atom is already oxidised. Therefore the conversion of TEOS to Silicon dioxide is a rearrangement rather than an oxidation. As can be seen from figure 1 what is basically required to deposit Silicon dioxide is a removal of two oxygen atoms for that a relative high temperature of 725 degrees C.   
 
On the new LPCVD TEOS furnace there are two standard processes for deposition, one for thin oxides called TEOSPNE and one for thicker oxides called TEOSSLOW. The only difference is that in the case of the TEOSSLOW recipe the furnace opens significantly slower. Thick TEOS layers have a tendency to form cracks if they are moved to fast out of the furnace.


==Process parameters for the two standard deposition recipes on the old nitride furnace:==
==Process parameters for the two standard deposition recipes on the old nitride furnace:==
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