Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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==HCl:H3PO4 etch== | ==HCl:H3PO4 etch== | ||
HCl(37%):H<sub>3</sub>PO<sub>4</sub>(85%) is a selective, anisotropic and slow etching of InP. Very slow rate in InGaAsP. The etch rates depend on the orientation of the features and have not yet been calibrated at DTU | HCl(37%):H<sub>3</sub>PO<sub>4</sub>(85%) is a selective, anisotropic and slow etching of InP. Very slow rate in InGaAsP. The etch rates depend on the orientation of the features and have not yet been calibrated at DTU Nanolab. | ||
See rates below for InP, PQ(1.n) and InGaAs lattice-matched to InP. '''The acronym PQ(1.n) denotes a lattice-matched InGaAsP on InP with a band gap corresponding to a wavelength of 1.n um.''' | See rates below for InP, PQ(1.n) and InGaAs lattice-matched to InP. '''The acronym PQ(1.n) denotes a lattice-matched InGaAsP on InP with a band gap corresponding to a wavelength of 1.n um.''' | ||