Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
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|+ '''TOPAS''' by khara@ | |+ '''TOPAS''' by khara@anolab | ||
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==Under etching and local masking== | ==Under etching and local masking== | ||
When etching TOPAS I have in general used a hard mask material underneath my layer of | When etching TOPAS I have in general used a hard mask material underneath my layer of photoresist, to ensure that if the resist was completely removed, a mask was still present. It is however always recommended to have a photoresist as mask, as a hard mask material will introduce roughness in unmask areas of the polymer. | ||
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|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | |[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | ||
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|style="width:200px;" |Etch broke through the | |style="width:200px;" |Etch broke through the photoresist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects. | ||
|style="width:200px;" |The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | |style="width:200px;" |The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | ||
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