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[[Image:stepper_image_1.jpg|300x300px|right|thumb|DUV Stepper is placed in F-3]]
[[Image:stepper_image_1.jpg|300x300px|right|thumb|DUV Stepper is placed in F-3]]


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]'''
'''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]'''


The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.
The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.
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'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]


== Process information ==
== Process information ==
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[[Image:Gamma_2M.jpg|300x300px|right|thumb|The SÜSS Spinner-Stepper is placed in F-3]]
[[Image:Gamma_2M.jpg|300x300px|right|thumb|The SÜSS Spinner-Stepper is placed in F-3]]


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper click here]'''
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper click here]'''


This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch  4", 6", and 8" size (8" requires tool change). The machine is equipped with the 3 resist lines (DUV42S-6, KRF M230Y, and KRF M35G), an automatic syringe system and a solvent line for cleaning and back-side rinse.
This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch  4", 6", and 8" size (8" requires tool change). The machine is equipped with the 3 resist lines (DUV42S-6, KRF M230Y, and KRF M35G), an automatic syringe system and a solvent line for cleaning and back-side rinse.
   
   
'''The user manual, and contact information can be found in LabManager:'''
'''The user manual, and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=279 LabManager]
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=279 LabManager]


==Process information==
==Process information==
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[[Image:SUSS_DEV.JPG|300x300px|right|thumb|The Developer-TMAH-Stepper is placed in F-3]]
[[Image:SUSS_DEV.JPG|300x300px|right|thumb|The Developer-TMAH-Stepper is placed in F-3]]


'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper click here]'''
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper click here]'''


This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch  4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.  
This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch  4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.  
   
   
'''The user manual and contact information can be found in LabManager:'''
'''The user manual and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=328 LabManager]
Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=328 LabManager]


<br clear="all" />
<br clear="all" />
==Process information==
==Process information==
[[Image:140 250 nm tilt22 (1).jpg|350x350px|right|thumb|The SEM picture of 250nm pillors and lines. Exposure dose is 140 J/m2.]]
[[Image:140 250 nm tilt22 (1).jpg|350x350px|right|thumb|The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J/m2.]]
The development process will be performed by the customer together with the Photolith group of Danchip. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.  
The development process will be performed by the customer together with the Photolith group of Danchip. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.  


Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf| chart‎]] demonstrating a dependence between 250nm line width/pillors diameter and exposure dose.
Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf| chart‎]] demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.
   
   
===Standard processes===
===Standard processes===