Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions
No edit summary |
No edit summary |
||
| Line 65: | Line 65: | ||
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | ||
|+ '''Al etch''' ''made by Chantal Silvetre@ | |+ '''Al etch''' ''made by Chantal Silvetre@nanolab October 2014'' | ||
|- | |- | ||
! rowspan="2" | Parameter | ! rowspan="2" | Parameter | ||
Revision as of 17:14, 25 November 2019
Feedback to this page: click here
Aluminium etch
The aluminium etch has two steps:
- Breakthrough
- The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
- Main
- The main step etches bulk aluminium.
| Parameter | Process step | |
|---|---|---|
| Breakthrough | Main | |
| Time (secs) | 20 | 40 (variable) |
| HBr (sccm) | - | 15 |
| Cl2 (sccm) | 20 | 25 |
| Pressure (mTorr) | 2, Strike 3 sec@5 mTorr | 1 |
| Coil power (W) | 600 | 500 |
| Platen power (W) | 125 | 100 |
| Temperature (oC) | 20 | 20 |
| Spacers (mm) | 30 | 30 |
| Results | ||
| Etch rate | ~350 nm/min (depending on features size and etch load) | |
| Parameter | Process step | |
|---|---|---|
| Breakthrough | Main | |
| Time (secs) | 20 | 40 (variable) |
| HBr (sccm) | - | 15 |
| Cl2 (sccm) | 20 | 25 |
| Pressure (mTorr) | 2, Strike 3 secs @ 6 mTorr | 1 |
| Coil power (W) | 600 | 500 |
| Platen power (W) | 125 | 100 |
| Temperature (oC) | 20 | 20 |
| Spacers (mm) | 100 | 100 |
| Results | ||
| Etch rate | ~282 nm/min (depending on features size and etch load) | |