Specific Process Knowledge/Etch/ICP Metal Etcher/silicon: Difference between revisions
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon click here]''' | ||
<!--Checked for updates on 30/7-2018 - ok/jmli --> | <!--Checked for updates on 30/7-2018 - ok/jmli --> | ||
== Silicon etching on the ICP Metal Etcher == | == Silicon etching on the ICP Metal Etcher == | ||
In the primary silicon etcher at | In the primary silicon etcher at Nanolab, the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus]], silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine. | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Chlorine/Bromine etch of nanostructures in silicon]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Chlorine/Bromine etch of nanostructures in silicon]] | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic| Isotropic etching in silicon]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic| Isotropic etching in silicon]] | ||
Revision as of 17:13, 25 November 2019
Feedback to this page: click here
Silicon etching on the ICP Metal Etcher
In the primary silicon etcher at Nanolab, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF6 as etch gas). Silicon is also etched by chlorine and bromine.