Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_process_trends click here]''' | ||
=Some general process trends= | =Some general process trends= | ||
This page is supposed to gather some general process trends and good | This page is supposed to gather some general process trends and good advice for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etching some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ nanolab before 2012'' | ||
==Etch rate== | ==Etch rate== | ||
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|Beam current * Beam voltage | |Beam current * Beam voltage | ||
|- | |- | ||
|not significantly | |not significantly affected by | ||
|Stage angle | |Stage angle | ||
|- | |- | ||
|not significantly | |not significantly affected by | ||
|Accelerator voltage | |Accelerator voltage | ||
|- | |- | ||
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|Accelerator voltage * Stage angle | |Accelerator voltage * Stage angle | ||
|- | |- | ||
|not significantly | |not significantly affected by | ||
|Beam voltage | |Beam voltage | ||
|- | |- | ||
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==Rotation speed== | ==Rotation speed== | ||
The rotation is activated to get a good uniformity over the wafer. The minimum number of rotations to get a good uniformity is 100 rotations for the whole etch. the maximum rotation speed is | The rotation is activated to get a good uniformity over the wafer. The minimum number of rotations to get a good uniformity is 100 rotations for the whole etch. the maximum rotation speed is 20 rpm. That means that an etch shorter that 5 min cannot obtain a very good uniformity. | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Etch Length [min] | !Etch Length [min] | ||
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*A guide to optimize etch uniformity is as follows: | *A guide to optimize etch uniformity is as follows: | ||
#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. | #Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br> | ||
#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br> | #Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br> | ||
#Adjust beam current to give optimum etch rate without overheating the sample.<brA> | #Adjust beam current to give optimum etch rate without overheating the sample.<brA> | ||