Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions

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-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''
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 *50 mm SSP Si wafer
 *525 µm thick
-*Supplied by Danchip
+*Supplied by Nanolab
 |.
 |-
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 !style="background:silver; color:black" align="left" valign="top"|Features to be etched
 |style="background:WhiteSmoke; color:black"|
-*300nm - 3µm dots and lines + a square of 200µmx200µm
+*300 nm - 3µm dots and lines + a square of 200µmx200µm
 |.
 |-
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 !style="background:silver; color:black" align="left" valign="top"|Etch rate
 |style="background:WhiteSmoke; color:black"|
-*>80nm/min
+*>80 nm/min
 |
-*22nm/min +- 0.3nm/min (one standard deviation)
+*22 nm/min +- 0.3nm/min (one standard deviation)
 |-
 !style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
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 !Ti etch acceptance
 |-
-|Neutalizer current [mA]
+|Neutralizer current [mA]
 |550
 |-