Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions
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<!--Checked for updates on 14/5-2018 - ok/jmli --> | <!--Checked for updates on 14/5-2018 - ok/jmli --> | ||
== Process C == | == Process C == | ||
Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm | Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | ||
The 100 mm wafers had an Al mask made by lift-off: | The 100 mm wafers had an Al mask made by lift-off: | ||
# 80 nm of spin coated ZEP520A E-beam resist | # 80 nm of spin coated ZEP520A E-beam resist | ||
# Patterned by E-beam | # Patterned by E-beam lithography | ||
# 20 nm Al deposited and patterned by lift-off | # 20 nm Al deposited and patterned by lift-off | ||
# ~ 99 % etch load | # ~ 99 % etch load | ||
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! Selectivity to resist | ! Selectivity to resist | ||
| Not | | Not specified | ||
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! Common | ! Common | ||
| colspan="4" | Temperature 10 | | colspan="4" | Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers | ||
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