Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.   
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075<sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.   


This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.  
This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.  


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''

Revision as of 16:07, 25 November 2019

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EXPIRED!!! The APOX furnace has been removed from the cleanroom August 2019.


Apox furnace (D1)

Apox furnace (D1): positioned in the A-5 room

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Nanolab employees are allowed to operate the furnace.

The user manual, technical information and contact information can be found in LabManager:

APOX Furnace (D1)

Process knowledge

Overview of the performance of the Apox furnace and some process related parameters

Purpose

Oxidation and annealing

Oxidation:
  • Wet: With bubbler (water steam + O2)
Performance Film thickness
  • Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range Process Temperature
  • 1075 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 0-10 slm
  • O2: 0-10 slm
Substrates Batch size
  • 1-200 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box)
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