Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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==Using LPCVD== | ==Using LPCVD== | ||
LPCVD nitride can be made in the LPCVD nitride furnace. It is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees celcius. The LPCVD nitride covers sidewalls well and the filmthickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride ( | LPCVD nitride can be made in the LPCVD nitride furnace. It is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-850 degrees celcius. The LPCVD nitride covers sidewalls well and the filmthickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition low stress nitride (SNR). | ||
==Using PECVD== | ==Using PECVD== | ||