Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

Pevo (talk | contribs)
Jmli (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide click here]'''  


Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point.
Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point.


==Deposition of Silicon Oxide using LPCVD==
==Deposition of Silicon Oxide using LPCVD==
The LPCVD oxide you can deposit at DANCHIP is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS).
The LPCVD oxide you can deposit at DTU Nanolab is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS).
*[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]]
*[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]]