Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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== InP etch with HBr chemistry== | |||
Work done by Aurimas Sakanas @Fotonik.dtu 2019. This work was done to obtain very low surface roughness. | Work done by Aurimas Sakanas @Fotonik.dtu 2019. This work was done to obtain very low surface roughness. | ||
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== InP etch with Cl2/H2 and a Si carrier wafer [[Image:section under construction.jpg|70px]] == | |||
''Work done by Berit Herstrøm @Nanolab spring 2019'' | ''Work done by Berit Herstrøm @Nanolab spring 2019'' | ||
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== InP etch with Cl2/CH4/Ar 2013== | |||
Work done by Matthew Haines in 2013 <br> | Work done by Matthew Haines in 2013 <br> | ||
*[[Media:InP_Etch_Presentation_Final_Version-ky-bghe.pdf|InP Etch Presentation by Matthew Haines]] | *[[Media:InP_Etch_Presentation_Final_Version-ky-bghe.pdf|InP Etch Presentation by Matthew Haines]] | ||
== InP/InGaAsP/InGaAs etch 2011 == | |||
Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011 | Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011 | ||