Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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! style="background:lightgrey; color:black" | Substrate cooling | ! style="background:lightgrey; color:black" | Substrate cooling and temperature | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C | ||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C | | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C | ||
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! style="background:WhiteSmoke; color:black" | Clamping | ! style="background:WhiteSmoke; color:black" | Clamping and wafer size | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)<br> Wafer size 4" | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)<br> Wafer size 4" | ||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4" | | style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 4" | ||