Specific Process Knowledge/Etch/III-V RIE: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_RIE click here]''' | ||
==III-V RIE Plassys== | ==III-V RIE Plassys== | ||
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== General information == | == General information == | ||
[[Image:III-V RIE Plassys.jpg|right|250px|thumb| III-V RIE is | [[Image:III-V RIE Plassys.jpg|right|250px|thumb| III-V RIE is located in room A-1]] | ||
Dry etching of III-V compound semiconductors is performed with a conventional Reactive Ion Etch (RIE) located in cleanroom 1. The III-V RIE is a Plassys model MG300. Find the company website her: [http://www.plassys.com/ Plassys]. | Dry etching of III-V compound semiconductors is performed with a conventional Reactive Ion Etch (RIE) located in cleanroom 1. The III-V RIE is a Plassys model MG300. Find the company website her: [http://www.plassys.com/ Plassys]. | ||