Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions
No edit summary |
No edit summary |
||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium click here]''' | ||
<!--Checked for updates on 30/7-2018 - ok/jmli --> | <!--Checked for updates on 30/7-2018 - ok/jmli --> | ||
Revision as of 10:20, 25 November 2019
Feedback to this page: click here
Aluminium etch
The aluminium etch has two steps:
- Breakthrough
- The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
- Main
- The main step etches bulk aluminium.
Parameter | Process step | |
---|---|---|
Breakthrough | Main | |
Time (secs) | 20 | 40 (variable) |
HBr (sccm) | - | 15 |
Cl2 (sccm) | 20 | 25 |
Pressure (mTorr) | 2, Strike 3 sec@5 mTorr | 1 |
Coil power (W) | 600 | 500 |
Platen power (W) | 125 | 100 |
Temperature (oC) | 20 | 20 |
Spacers (mm) | 30 | 30 |
Results | ||
Etch rate | ~350 nm/min (depending on features size and etch load) |
Parameter | Process step | |
---|---|---|
Breakthrough | Main | |
Time (secs) | 20 | 40 (variable) |
HBr (sccm) | - | 15 |
Cl2 (sccm) | 20 | 25 |
Pressure (mTorr) | 2, Strike 3 secs @ 6 mTorr | 1 |
Coil power (W) | 600 | 500 |
Platen power (W) | 125 | 100 |
Temperature (oC) | 20 | 20 |
Spacers (mm) | 100 | 100 |
Results | ||
Etch rate | ~282 nm/min (depending on features size and etch load) |