Specific Process Knowledge/Lithography/Descum: Difference between revisions
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|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7 | |'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7 | ||
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|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22 | |||
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Revision as of 09:54, 20 November 2019
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Descum results
Plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
Plasma asher 2Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber. Experiment parameters
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