Specific Process Knowledge/Lithography/Descum: Difference between revisions

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===Plasma asher 2 ===
 
==Plasma asher 2 ==
 


Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.


Experiment parameters
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Revision as of 16:11, 19 November 2019

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Descum results

Plasma asher 1

Descum results plasma asher 1
Descum results plasma asher 2

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm)
ashing time (min)
Recipe O2 flow N2 flow Power 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
2 500 0 200 8,1 32,9 271,1 495,6 446,2


Conny Hjort & Jesper Hanberg September 2019




Plasma asher 2

Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.

Experiment parameters
O2 flow N2 flow Power
100 100 150


Ashing time (min) 1 2 3 4 6 7 8 9 10 12 14 15 20
Etched Thickness (nm) 8,7 5,1 12,5 6,2 31,8 86,0 25,7 46,8 38,3 49,7 59,4 140,1 360,7