Specific Process Knowledge/Lithography/Descum: Difference between revisions

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Conny Hjort & Jesper Hanberg
Conny Hjort & Jesper Hanberg
September 2019
September 2019
===Plasma asher 2 ===
[[Image:descum_graf.jpg|right|frame|Descum results]]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|-
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
|-
|}

Revision as of 15:13, 19 November 2019

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Descum results

Plasma asher 1

Descum results

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm)
ashing time (min)
Recipe O2 flow N2 flow Power 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
2 500 0 200 8,1 32,9 271,1 495,6 446,2


Conny Hjort & Jesper Hanberg September 2019