Specific Process Knowledge/Lithography/Descum: Difference between revisions

Revision as of 15:01, 19 November 2019

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Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Conny Hjort & Jesper Hanberg September 2019

Ashing time (min)	1	2	3	4	6	7	8	9	10	12	14	15	20
Etched Thickness (nm)	8,7	5,1	12,5	6,2	31,8	86,0	25,7	46,8	38,3	49,7	59,4	140,1	360,7

@@ Line 80: / Line 80: @@
 |- style="background:LightGrey"
-|ashing time (min)|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
+|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
 |-
-|Etched Thickness (nm)|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
+|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
 |-
 |}