Specific Process Knowledge/Lithography/Descum: Difference between revisions

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| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
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Revision as of 14:52, 19 November 2019

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Descum results

Plasma asher 1

Descum results

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm)
ashing time (min)
Recipe O2 flow N2 flow Power 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
2 500 0 200 8,1 32,9 271,1 495,6 446,2


Conny Hjort & Jesper Hanberg September 2019
















Plasma asher 2

Descum results
Etched Thickness (nm)
ashing time (min)
1 2 3 4 6 7 8 9 10 12 14 15 20
8,7 5,1 12,5 6,2 31,8 86,0 25,7 46,8 38,3 49,7 59,4 140,1 360,7