Specific Process Knowledge/Lithography/Descum: Difference between revisions

Revision as of 14:50, 19 November 2019

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Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Conny Hjort & Jesper Hanberg September 2019

@@ Line 75: / Line 75: @@
 ! colspan="13" | ashing time (min)
 |- style="background:LightGrey"
-|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20 |-
+|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
-| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1
+|-
+| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 140,1 || 360,7
 |-
 |}