Specific Process Knowledge/Lithography/Descum: Difference between revisions

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| align="center" |  
| align="center" |  
{| border="1" cellspacing="1" cellpadding="2"  align="center"
{| border="1" cellspacing="1" cellpadding="2"  align="center"
! colspan="4" | Settings
! colspan="13" | Etched Thickness (nm)  
! colspan="6" | Etched Thickness (nm)  
|-
|-
| colspan="4" |
! colspan="6" | ashing time (min)   
! colspan="6" | ashing time (min)   
|- style="background:LightGrey"
|- style="background:LightGrey"

Revision as of 14:45, 19 November 2019

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Descum results

Plasma asher 1

Descum results

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm)
ashing time (min)
Recipe O2 flow N2 flow Power 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
2 500 0 200 8,1 32,9 271,1 495,6 446,2


Conny Hjort & Jesper Hanberg September 2019
















Plasma asher 2

Descum results
Etched Thickness (nm)
ashing time (min)
1 2 3 4 6 7 8 9 10 12 14 15 20 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
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