Specific Process Knowledge/Lithography/Descum: Difference between revisions
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===Plasma asher 2 === | ===Plasma asher 2 === | ||
[[Image:descum_graf.jpg|right|frame|Descum results]] | |||
{| {{table}} | |||
| align="center" | | |||
{| border="1" cellspacing="1" cellpadding="2" align="center" | |||
! colspan="4" | Settings | |||
! colspan="6" | Etched Thickness (nm) | |||
|- | |||
| colspan="4" | | |||
! colspan="6" | ashing time (min) | |||
|- style="background:LightGrey" | |||
|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20 || | |||
| 1 || 2 || 5 || 7 || 10 || 10 | |||
|- | |||
| 1 || 70 || 70 || 150 || 14,2 || 16,3 || 47,6 || 123,2 || 854,3 || 862,1 | |||
|- | |||
|} | |||
Revision as of 14:43, 19 November 2019
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Descum results
Plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
Plasma asher 2
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