Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
| Line 103: | Line 103: | ||
|Etch rate | |Etch rate | ||
| | | | ||
925 nm/min (small piece) | |||
|- | |- | ||
|Sidewall angle | |Sidewall angle | ||
| | | | ||
90<sup>o</sup> (on this sample)<br> | |||
|- | |- | ||
|Selectivity (InP: | |Selectivity (InP:SiO2 (PECVD 500nm) | ||
| | | approx.17:1 | ||
|- | |- | ||
|} | |} | ||