Specific Process Knowledge/Lithography/nLOF: Difference between revisions

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	==Development==		==Development==

	A 2µm nLOF resist film is fully developed in 20-30s using TMAH (AZ 726). However, the development can be continued to 60s in order to get a nore negative resist profile (increase the under-cut).		A 2µm nLOF resist film is fully developed in 20-30s using TMAH (AZ 726 MIF). However, the development can be continued to 60s in order to get a nore negative resist profile (increase the under-cut).