Specific Process Knowledge/Lithography/Descum: Difference between revisions

From LabAdviser
Jehan (talk | contribs)
Jehan (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:photolith@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Descum click here]'''
<!-- Replace "http://labadviser.danchip.dtu.dk/..." with the link to the Labadviser page-->
==Descum results==
==Descum results==


Line 26: Line 29:
|-
|-
|}
|}
Conny Hjort & Jesper Hanberg
September 2019

Revision as of 15:41, 21 October 2019

Feedback to this page: click here

Descum results

Plasma asher 1

Descum results

Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.

Note: Plasma asher was cold before use

Settings Etched Thickness (nm)
ashing time (min)
Recipe O2 flow N2 flow Power 1 2 5 7 10 10
1 70 70 150 14,2 16,3 47,6 123,2 854,3 862,1
2 500 0 200 8,1 32,9 271,1 495,6 446,2

Conny Hjort & Jesper Hanberg September 2019