Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s | Image:Picture1.jpg|200 nm wide line structure, t<sub>etch</sub>=25 s | ||
Image:Picture2.jpg| | Image:Picture2.jpg|700 nm wide line structure, t<sub>etch</sub>=25 s <br> | ||
</gallery> | </gallery> | ||
<gallery widths="200px" heights="150px" perrow="3"> | <gallery widths="200px" heights="150px" perrow="3"> | ||