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Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes: Difference between revisions

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==Recipes for dry oxidation==
The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers.  
 
Dry oxidation of silicon wafers can be done in these furnaces:
* A1 Boron Drive-in and Pre-dep
* A2 Gate Oxide
* A3 Phosphorus Drive-in
* C1 Anneal Oxide
* C3 Anneal Bond
* C4 Al-Anneal
 
The recipes for dry oxidation are very similar on these furnaces.
 
The oxidation and annealing times are variable commands. It means that these can be changed by the users. The maximum allowed oxidation time is ...
 
The oxidation temperatures are fixed in the recipes. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C.  


On this page the steps in the standard oxidation recipes on the furnaces will be listet.
   
   


 
===Dry oxidation can be done in the these furnaces:===
The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers.
 
Dry oxidation can be done in the these furnaces:


*A1 Boron Drive-in and Pre-dep furnace  
*A1 Boron Drive-in and Pre-dep furnace  
Line 34: Line 18:
*Multipurpose Anneal furnace
*Multipurpose Anneal furnace


Wet oxidation can be done in these furnaces:
The dry oxidation recipes in the A- and C-stack furnaces are very similar and will be described on this page.
 
There are no standard recipes on the Multipurpose Anneal furnace, so no oxidation recipes will be described here.
 
 
===Wet oxidation can be done in these furnaces:===


*A1 Boron Drive-in and Pre-dep furnace  
*A1 Boron Drive-in and Pre-dep furnace  
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*C1 Anneal-Oxide furnace  
*C1 Anneal-Oxide furnace  
*C2 III-V Oxidation furnace  
*C2 III-V Oxidation furnace  
*C3 Annea-Bond furnace  
*C3 Anneal-Bond furnace  


On this page the steps in the standard oxidation recipes on the furnaces will be listet.  
The wet oxidation recipes in the A-stack, C1 and C3 furnaces are very similar.  


Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:  
Wet oxidation of III-V sample in the C2 furnace is described here:


http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)
http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)


Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.


===General recipe remarks:===
The oxidation temperature is fixed in each recipe. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C and "WET1100" for wet oxidation at 1100 C.


The oxidation and annealing times are variable commands in oxidation recipe. It means that these can be changed by the users.
The oxid thickness is defined by the oxidation time. Wet oxidation is much faster then dry oxidation. It is maximum allowed to grow 300 nm of dry oxide and 3 um of wet oxidation.
The annealing improves... The standard annealing time is 20 minutes, but it is possible to change the time.






===Dry oxidation recipe steps===
==Dry oxidation recipe steps==


0 STANDBY
0 STANDBY

Revision as of 13:52, 25 September 2019

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The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers.

On this page the steps in the standard oxidation recipes on the furnaces will be listet.


Dry oxidation can be done in the these furnaces:

  • A1 Boron Drive-in and Pre-dep furnace
  • A2 Gate Oxide furnace
  • A3 Phosphorus Pre-dep furnace
  • C1 Anneal-Oxide furnace
  • C3 Anneal-Bond furnace
  • Multipurpose Anneal furnace

The dry oxidation recipes in the A- and C-stack furnaces are very similar and will be described on this page.

There are no standard recipes on the Multipurpose Anneal furnace, so no oxidation recipes will be described here.


Wet oxidation can be done in these furnaces:

  • A1 Boron Drive-in and Pre-dep furnace
  • A3 Phosphorus Pre-dep furnace
  • C1 Anneal-Oxide furnace
  • C2 III-V Oxidation furnace
  • C3 Anneal-Bond furnace

The wet oxidation recipes in the A-stack, C1 and C3 furnaces are very similar.

Wet oxidation of III-V sample in the C2 furnace is described here:

http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)


General recipe remarks:

The oxidation temperature is fixed in each recipe. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C and "WET1100" for wet oxidation at 1100 C.

The oxidation and annealing times are variable commands in oxidation recipe. It means that these can be changed by the users.

The oxid thickness is defined by the oxidation time. Wet oxidation is much faster then dry oxidation. It is maximum allowed to grow 300 nm of dry oxide and 3 um of wet oxidation.

The annealing improves... The standard annealing time is 20 minutes, but it is possible to change the time.





Dry oxidation recipe steps

0 STANDBY Message: "Standby"

The furnace is



Temperature: 700 C N2 flow: 3 SLM Furnace closed

The user has to press "Start" (on the touch screen or furnace computer) to start the recipe.

It a dry oxidation recipe is aborted, it will jump to the "Standby" step.

  • LM-LOCK

Message: "Standby" The recipe can only continue, if a user is logged on in LabManager

  • OPEN

Message: "Boat moving" The furnace opens

  • LOAD WAFERS

Message: "Load wafers Wafers are loaded in furnace.

The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace

  • CLOSE

Message: "Boat moving" The furnace is closing

  • HEAT UP

Message: "Heat-up" The furnace is heating up to the temperature defined in the recipe The recipe will continue to the next step, when the temperature of center heating zone (zone 2) reached the right temperature

  • OXIDATION

Message: "Dry oxidation"

The dry oxidation is started O2 flow: 5 SLM N2 flow: 0 SLM

The oxidation time is a variable command.

has been defined by the user. The oxidation time can be changed, until the oxidation step is started.

  • ANNEAL

Message: "Anneals/Dens"

  • COOL DOWN

Message: "Cool-down"

The furnace is cooling down to 700 C (the standby temperature)

  • UNLOAD WAFERS

Message: "Unload wafers"

The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace

  • OPEN

Message: "Open"

The furnace opens.

  • UNLOAD

Message: "Unload wafers"

When the furnace is open, the wafer can be unloaded. Be aware of, that the wafers are very hot, so they have to cool down for about five minutes

When the wafers are unloaded, the user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace. The recipe then jumps to the STANDBY step, and the user can leave the furnace, after it has closed.

If a recipe is aborted



The standard annealing time is 20 minutes, but users can change the time. The annealing time can be changed, until the annealing step is started.

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