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===Steps in the dry oxidation recipes===


*STANDBY
The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers.
 
Dry oxidation can be done in the these furnaces:
 
*A1 Boron Drive-in and Pre-dep furnace
*A2 Gate Oxide furnace
*A3 Phosphorus Pre-dep furnace
*C1 Anneal-Oxide furnace
*C3 Anneal-Bond furnace
*Multipurpose Anneal furnace
 
Wet oxidation can be done in these furnaces:
 
*A1 Boron Drive-in and Pre-dep furnace
*A3 Phosphorus Pre-dep furnace
*C1 Anneal-Oxide furnace
*C2 III-V Oxidation furnace
*C3 Annea-Bond furnace
 
On this page the steps in the standard oxidation recipes on the furnaces will be listet.
 
Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:
 
http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)
 
Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.
 
 
 
 
 
===Dry oxidation recipe steps===
 
0 STANDBY
Message: "Standby"
Message: "Standby"
The furnace is
Temperature: 700 C
Temperature: 700 C
N2 flow: 3 SLM
N2 flow: 3 SLM
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The furnace opens
The furnace opens


*LOAD
*LOAD WAFERS
Message: "Load wafers
Message: "Load wafers
Wafers are loaded in furnace.  
Wafers are loaded in furnace.  
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N2 flow: 0 SLM
N2 flow: 0 SLM


The oxidation time has been defined by the user. The oxidation time can be changed, until the oxidation step is started.  
The oxidation time is a variable command.
 
has been defined by the user. The oxidation time can be changed, until the oxidation step is started.  


*ANNEAL  
*ANNEAL  
Message: "Anneals/Dens"
Message: "Anneals/Dens"


The standard annealing time is 20 minutes, but users can change the time. The annealing time can be changed, until the annealing step is started.
*COOL DOWN
Message: "Cool-down"


The furnace is cooling down to 700 C (the standby temperature)


*UNLOAD WAFERS
Message: "Unload wafers"


The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace 
*OPEN
Message: "Open"


The furnace opens.


*UNLOAD
Message: "Unload wafers"


When the furnace is open, the wafer can be unloaded.
Be aware of, that the wafers are very hot, so they have to cool down for about five minutes


When the wafers are unloaded, the user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace.
The recipe then jumps to the STANDBY step, and the user can leave the furnace, after it has closed. 
If a recipe is aborted




Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:


http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)


Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.
The standard annealing time is 20 minutes, but users can change the time. The annealing time can be changed, until the annealing step is started.
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