Specific Process Knowledge/Lithography/Descum: Difference between revisions
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===Plasma asher 1 === | ===Plasma asher 1 === | ||
[[image:Descum Results aug 2019.png|right|frame| Descum results]] | |||
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer. | ||
Revision as of 11:31, 30 August 2019
Descum results
Plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
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