Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes: Difference between revisions
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The recipes for dry oxidation are very similar on these furnaces. | The recipes for dry oxidation are very similar on these furnaces. | ||
The oxidation and annealing times | The oxidation and annealing times are variable commands. It means that these can be changed by the users. The maximum allowed oxidation time is ... | ||
The oxidation temperatures are fixed in the recipes. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C. | |||
===Steps in the dry oxidation recipes=== | ===Steps in the dry oxidation recipes=== | ||
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The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace | The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace | ||
*CLOSE | |||
Message: "Boat moving" | |||
The furnace is closing | |||
*HEAT UP | |||
Message: "Heat-up" | |||
The furnace is heating up to the temperature defined in the recipe | |||
The recipe will continue to the next step, when the temperature of center heating zone (zone 2) reached the right temperature | |||
*OXIDATION | |||
Message: "Dry oxidation" | |||
The dry oxidation is started | |||
O2 flow: 5 SLM | |||
N2 flow: 0 SLM | |||
The oxidation time has been defined by the user. The oxidation time can be changed, until the oxidation step is started. | |||
*ANNEAL | |||
Message: "Anneals/Dens" | |||
The standard annealing time is 20 minutes, but users can change the time. The annealing time can be changed, until the annealing step is started. | |||
Revision as of 09:48, 29 August 2019
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Recipes for dry oxidation
Dry oxidation of silicon wafers can be done in these furnaces:
- A1 Boron Drive-in and Pre-dep
- A2 Gate Oxide
- A3 Phosphorus Drive-in
- C1 Anneal Oxide
- C3 Anneal Bond
- C4 Al-Anneal
The recipes for dry oxidation are very similar on these furnaces.
The oxidation and annealing times are variable commands. It means that these can be changed by the users. The maximum allowed oxidation time is ...
The oxidation temperatures are fixed in the recipes. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C.
Steps in the dry oxidation recipes
- STANDBY
Message: "Standby" Temperature: 700 C N2 flow: 3 SLM Furnace closed
The user has to press "Start" (on the touch screen or furnace computer) to start the recipe.
It a dry oxidation recipe is aborted, it will jump to the "Standby" step.
- LM-LOCK
Message: "Standby" The recipe can only continue, if a user is logged on in LabManager
- OPEN
Message: "Boat moving" The furnace opens
- LOAD
Message: "Load wafers Wafers are loaded in furnace.
The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace
- CLOSE
Message: "Boat moving" The furnace is closing
- HEAT UP
Message: "Heat-up" The furnace is heating up to the temperature defined in the recipe The recipe will continue to the next step, when the temperature of center heating zone (zone 2) reached the right temperature
- OXIDATION
Message: "Dry oxidation"
The dry oxidation is started O2 flow: 5 SLM N2 flow: 0 SLM
The oxidation time has been defined by the user. The oxidation time can be changed, until the oxidation step is started.
- ANNEAL
Message: "Anneals/Dens"
The standard annealing time is 20 minutes, but users can change the time. The annealing time can be changed, until the annealing step is started.
Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:
Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.