Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes: Difference between revisions

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+==Recipes for dry oxidation==
+Dry oxidation of silicon wafers can be done in these furnaces:
+* A1 Boron Drive-in and Pre-dep
+* A2 Gate Oxide
+* A3 Phosphorus Drive-in
+* C1 Anneal Oxide
+* C3 Anneal Bond
+* C4 Al-Anneal
+The recipes for dry oxidation are very similar on these furnaces.
+The oxidation and annealing times
+===Steps in the dry oxidation recipes===
+*STANDBY
+Message: "Standby"
+Temperature: 700 C
+N2 flow: 3 SLM
+Furnace closed
+The user has to press "Start" (on the touch screen or furnace computer) to start the recipe.
+It a dry oxidation recipe is aborted, it will jump to the "Standby" step.
+*LM-LOCK
+Message: "Standby"
+The recipe can only continue, if a user is logged on in LabManager
+*OPEN
+Message: "Boat moving"
+The furnace opens
+*LOAD
+Message: "Load wafers
+Wafers are loaded in furnace.
+The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace
+Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:
+http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)
+Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.