Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
| Line 10: | Line 10: | ||
Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | ||
<gallery caption="Attempt to dissolve Al<sub>2</sub>O<sub>3</sub> with HF." widths="1000px" heights="700px" perrow="1"> | %<gallery caption="Attempt to dissolve Al<sub>2</sub>O<sub>3</sub> with HF." widths="1000px" heights="700px" perrow="1"> | ||
[image:AL203_Hf_etch.png] | [[image:AL203_Hf_etch.png]] | ||
</gallery> | %</gallery> | ||
<br clear="all" /> | %<br clear="all" /> | ||
The etch rates: | The etch rates: | ||