Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch using HF: Difference between revisions
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Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | Si samples with about 100 nm of [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD]] deposited Al<sub>2</sub>O<sub>3</sub> (1000 cycles at 300<sup>o</sup>C) has been etched in different HF concentrations. After the etching, the thickness of the Al<sub>2</sub>O<sub>3</sub> layer has been measured, and the thickness as function of time has been plotted as shown in the graph below. | ||
<gallery caption="attempt to dissolve Al<sub>2</sub>O<sub>3</sub> with HF." widths="500px" heights="500px" perrow="4"> | |||
[[image:AL203_Hf_etch.jpg|500x500px|left|thumb|]] | [[image:AL203_Hf_etch.jpg|500x500px|left|thumb|]] | ||
</gallery> | |||
<br> | <br clear="all" /> | ||
The etch rates: | The etch rates: | ||