Specific Process Knowledge/Characterization/III-V ECV-profiler: Difference between revisions
No edit summary |
|||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:danchipsupport@ | '''Feedback to this page''': '''[mailto:danchipsupport@Nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.Nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/III-V_ECV-profiler click here]''' | ||
==III-V ECV-profiler== | ==III-V ECV-profiler== | ||
Line 9: | Line 9: | ||
The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors. | The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors. | ||
''The ECV-profiler is maintained by DTU fotonik (not | ''The ECV-profiler is maintained by DTU fotonik (not DTU Nanolab) and is therefor not in LabManager!'' | ||
ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer. | ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer. |
Revision as of 13:47, 23 August 2019
Feedback to this page: click here
III-V ECV-profiler
The ECV (Electrochemical Capacitance-Voltage) technique is used to measure carrier-density as a function of depth (doping-profile) on planar semiconductor structures - usually III-V compound semiconductors.
The ECV-profiler is maintained by DTU fotonik (not DTU Nanolab) and is therefor not in LabManager!
ECV is a destructive technique requiring a sample size of at least 5x5mm and good skills to obtain reproduceable and reliable results. The sample is placed in a electrochemical cell and electrical contacted to form a capacitor. This is done on one side through the electrolyte and on the other side via a ohmic contact on either the front- or the backside (preferred) of the wafer.
Performance | Excitation |
|
---|---|---|
Detection |
| |
Sample size |
| |
Resolution |
| |
Carrier density accuracy |
| |
Materials | Allowed substrate materials |
|