Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | *[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | ||
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | *[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | ||
*[[/C2 Furnace III-V oxidation |III-V oxidation furnace(C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing of wafers containing aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | ||