Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
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Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness. | ||
''' | '''Do not use the power more than 180W''', since the Si target could break into a lot of small pieces. | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
Revision as of 08:41, 15 August 2019
Silicon sputter
Silicon can be sputter deposited in Wordentec.
Parameters
Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
Do not use the power more than 180W, since the Si target could break into a lot of small pieces.
| Settings 1 | Settings 2 | |
|---|---|---|
| Process type | Sputtering | Sputtering |
| Power | 130W | 170W |
| Sputter pressure | 5*10-3 mbar | 1*10-2 mbar |
| Rate | About 0.7 Å/s | About 0.6 Å/s |