Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  
The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  


The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.
The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.
 
 
Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.  
Before use, samples have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.  


Please check the cross contamination information in LabManager before you use the furnace.  
Please check the cross contamination information in LabManager before you use the furnace.  
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'''The user manual and contact information can be found in LabManager:'''
'''The user manual and contact information can be found in LabManager:'''


'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
'''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&page_id=169  III-V Oxidation (C2)]'''


==Process knowledge==
==Process knowledge==

Revision as of 08:08, 15 August 2019

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III-V Oxidation furnace (C2)

The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is a Tempress horizontal furnace. A Sample is placed on the carrier quartz plate, which always be kept inside the furnace tube, and loaded to the hot furnace that filling with water vapour. The sample get oxidized at the desired time and then the furnace door will automatically open so that the oxidation stops and the sample is ready to be unloaded.

Before use, samples have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oxidation (C2)

Process knowledge

Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon