Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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==III-V Oxidation furnace (C2)==
==III-V Oxidation furnace (C2)==

Revision as of 07:40, 15 August 2019

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III-V Oxidation furnace (C2)

The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Process knowledge

Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon