Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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==III-V Oven (D4)==
==III-V Oxidation furnace (C2)==
[[Image:IIIV_Oven.jpg|thumb|450x450px|III-V Oven (D4). Positioned in cleanroom area F-3.]]


The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  
The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.  


The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.   
The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.   

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III-V Oxidation furnace (C2)

The III-V Oxidaiont furnace (C2) is being use on August 2019 for wet thermal oxidation of III-V devices instead of the III-V ovn, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Process knowledge


Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon