Specific Process Knowledge/Thermal Process/C2 Furnace III-V oxidation: Difference between revisions

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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation click here]'''
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==III-V Oven (D4)==
[[Image:IIIV_Oven.jpg|thumb|450x450px|III-V Oven (D4). Positioned in cleanroom area F-3.]]
The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.
The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used. 
Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.
Please check the cross contamination information in LabManager before you use the furnace.
'''The user manual and contact information can be found in LabManager:'''
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=187 III-V Oven (D4)]'''
==Process knowledge==
*[[Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_furnace_(D4)|Standard wet oxidation recipe on the III-V furnace]]
==Overview of the performance of the III-V Oven and some process related parameters==
{| border="2" cellspacing="0" cellpadding="2"
|-
!style="background:silver; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Wet oxidation of III-V dvices
|-
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Lateral oxidation rate
|style="background:WhiteSmoke; color:black"|
*Very sample dependent
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process temperature
|style="background:WhiteSmoke; color:black"|
*420 <sup>o</sup>C
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
*1 atm
|-
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (bobler)
*N<sub>2</sub>
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*Several smaller samples (placed vertically on a quartz plate)
|-
| style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:WhiteSmoke; color:black"|
*III-V devices
*Silicon
|-
|}
<!--
{| border="1" style="text-align: center; width: 500px; height: 100px;"
! colspan="5" style="text-align: center;" style="background: #efefef;" | III-V Oxidation Oven
|-
! scope="row" width="20%" |Volume
! width="30%" |Gas
! width="20%" |Maximum flow rate
! width="20%" |Filling time
! width="20%" |Temperature range
|-
|60 L
|H<sub>2</sub>O carried by N<sub>2</sub>
|900 sccm
|30 min
|?
|}
-->

Revision as of 13:37, 14 August 2019

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III-V Oven (D4)

III-V Oven (D4). Positioned in cleanroom area F-3.

The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Process knowledge


Overview of the performance of the III-V Oven and some process related parameters

Purpose
  • Wet oxidation of III-V dvices
Performance Lateral oxidation rate
  • Very sample dependent
Process parameter range Process temperature
  • 420 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2 (bobler)
  • N2
Substrates Batch size
  • Several smaller samples (placed vertically on a quartz plate)
Substrate materials allowed
  • III-V devices
  • Silicon


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