Specific Process Knowledge/Characterization/X-Ray Diffractometer: Difference between revisions

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The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors.
The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors.


''The X-Ray Diffractometer is maintained by DTU fotonik (not Danchip) and is therefore not in LabManager!''
''The X-Ray Diffractometer is maintained by DTU fotonik (not Nanolab) and is therefore not in LabManager!''


X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compunds containing three different materials are also called ternaries.
X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compunds containing three different materials are also called ternaries.

Revision as of 10:53, 13 August 2019

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X-Ray Diffractometer

X-ray diffractometer

The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors.

The X-Ray Diffractometer is maintained by DTU fotonik (not Nanolab) and is therefore not in LabManager!

X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in GaxIn1-xAs grown on InP. Ga0.47In0.53As is lattice-matched to InP. Compunds containing three different materials are also called ternaries. For more complex compounds containing 4 elements, known as quaternaries, e.g. GaxIn1-xAsyP1-y, it is possible to obtain both x and y by combining x-ray diffraction measurements and PL-measurements (see PL Mapper).

Equipment performance and process related parameters

Performance Excitation
  • x-ray tube Cu K-alpha (K) 1.5418 Å
Detection
  • counter
Sample size
  • from 5x5mm up to 4" approximately
Resolution
  • ?? arc-sec
Materials Allowed substrate materials
  • III-V
  • Silicon