Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions
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| NA <!--Keywords --> | | NA <!--Keywords --> | ||
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! no name, tested by Lior Shiv@Capres 2019-017-12 <!--Recipe Name --> | |||
| A <!--Step --> | |||
| 20 <!--Temperature --> | |||
| - <!--Process time (needed if ramping is enabled) --> | |||
| 10 <!--Pressure --> | |||
| - <!--Process chamber setup --> | |||
| 90 <!--SF6 flow --> | |||
| 0 <!--O2 flow --> | |||
| 0 <!--C4F8 flow --> | |||
| 0 <!--Ar flow --> | |||
| 0 <!--CF4 flow --> | |||
| 0 <!--H2 flow --> | |||
| 0 <!--CH4 flow --> | |||
| 0 <!--BCl3 flow --> | |||
| 0 <!--Cl2 flow --> | |||
| 0 <!--HBr flow --> | |||
| 150 <!--Coil power --> | |||
| 3 <!--Platen power --> | |||
| <!-- link processes --> | |||
| About 10% load, etch rate around 400nm/min <!--Keywords --> | |||
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|} | |} | ||