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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,579 edits
Line 35: Line 35:
| 20            <!--Temperature  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 90           <!--Pressure  -->
| 20           <!--Pressure  -->
| -      <!--Process chamber setup  -->
| -      <!--Process chamber setup  -->
| 50             <!--SF6 flow  -->
| 90             <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--C4F8 flow  -->
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