Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan33-2

The Sinano3.3 recipe

Recipe Sinano3.3

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 75 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	300 secs
Conditions	Run ID	444
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	348 nm zep etched down to 53 nm

• The results of the Sinano3.3 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 75 W PP, 20 degs, 300 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		59	82	114	120	129	101	29
Sidewall angle	degs		85	83	83	82	81	83	2
CD loss	nm/edge		-1	0	-5	-7	-13	-5	5
CD loss foot	nm/edge		-1	0	-5	-7	18	1	10
Bowing			18	27	36	38	23	28	9
Bottom curvature			-41	-27	-16	-30	-9	-24	12
Zep etch rate								59