Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan37: Difference between revisions
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
<!-- Ok, jmli 20170627 --> | <!-- Ok, jmli 20170627 --> | ||
<!-- revised 1/6-2015 by jmli --> | <!-- revised 1/6-2015 by jmli --> | ||
<!--Checked for updates on 10/7-2019 - ok/jmli --> | |||
{| {{table}} | {| {{table}} | ||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | | align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | ||
Revision as of 09:48, 10 July 2019
| Nominal trench line width | ' | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
| Etch rate | nm/min | 59 | 67 | 67 | 67 | 68 | 66 | 4 | |
| Sidewall angle | degs | 84 | 86 | 84 | 86 | 86 | 85 | 1 | |
| CD loss | nm/edge | -16 | -31 | -29 | -36 | -33 | -29 | 8 | |
| CD loss foot | nm/edge | -16 | -23 | -14 | -18 | -12 | -17 | 4 | |
| Bowing | 7 | 23 | 15 | 10 | 9 | 13 | 7 | ||
| Bottom curvature | -27 | -8 | 11 | 9 | 4 | -2 | 15 | ||