Specific Process Knowledge/Etch/Etching of Polymer/Polymer Etch by ASE: Difference between revisions

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= Etching of polymers on the ASE =
= Etching of polymers on the ASE =

Revision as of 09:47, 10 July 2019

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Etching of polymers on the ASE

SPTS has provided some recipes for polymer etching on the ASE. They have NOT been tested yet (As of August 2011) and we are therefore very interested in learning whatever experiences you have. Please contact Jonas. The recipes are located in the root folder. Please copy them to your own folder and modify them there for your own purposes as you would with any other recipe.

The polymer recipes
Name Materials Process parameters Comments by Kevin Riddell SPTS prior to any tests at Danchip
Mask Etched O2 CO2 (no available anymore) SF6 He/Ar Pressure Temp Coil Platen
poly1 Oxide hard mask polyimide/PMMA 0 50 0 0 4 0 600 150 This will etch PMGI, PI, & standard resists. We've never tried it for PMMA, but it should work
poly2 standard resists, PI PMMA 20 0 0 20 3 10 600 150 This will give higher etch rates & better selectivities, but slightly more bowed profiles
poly3 BCB 43 0 7 0 4 20 800 150 A good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers. The SF6/O2 ratio will depend on the composition of the polymer.


CYTOP etching: Results by Fei Wang, DTU Nanotech

Recipe
Folder\name Materials Process parameters Comments
Mask Etched O2 CO2 SF6 He/Ar Pressure Temp Coil Platen
set\microrea\feicy3 1.5 µm PR CYTOP 5 0 0 20 3 0 600 150 Estimated etch rate ~1.3um/min, selectivity around 1:8, etch load app. 10%


SU8

Etching of SU-8

TOPAS

Etching of Topas