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Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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The autofocus mode is selected via the substrate template.
The autofocus mode is selected via the substrate template.


'''Optical:''' Varies greatly with resist type and thickness, see [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]. Probably also dependent on substrate.
'''Optical:''' Varies greatly with resist type and thickness, see [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]. Probably also dependent on substrate. Should work for substrates down to 3x3mm<sup>2</sup>.


Should work for substrates down to 3x3mm2.
'''Pneumatic:''' Probably similar for resists of similar thickness, and not likely to vary with substrate. For 375nm exposure, the optimum seems to be around -15 ([[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Large_defocus_range|Large defocus range]]). Substrates must be at least 10x10mm<sup>2</sup>.
 
'''Pneumatic:''' Probably similar for resists of similar thickness, and not likely to vary with substrate. For 375nm exposure, the optimum seems to be around -15 ([[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Large_defocus_range|Large defocus range]]).
 
Substrates must be at least 10x10mm2.


==Exposure mode==
==Exposure mode==
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