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Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions

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'''Optical:''' Varies greatly with resist type and thickness, see [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]. Probably also dependent on substrate.
'''Optical:''' Varies greatly with resist type and thickness, see [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]. Probably also dependent on substrate.
Should work for substrates down to 3x3mm2.


'''Pneumatic:''' Probably similar for resists of similar thickness, and not likely to vary with substrate. For 375nm exposure, the optimum seems to be around -15 ([[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Large_defocus_range|Large defocus range]]).
'''Pneumatic:''' Probably similar for resists of similar thickness, and not likely to vary with substrate. For 375nm exposure, the optimum seems to be around -15 ([[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Large_defocus_range|Large defocus range]]).
Substrates must be at least 10x10mm2.


==Exposure mode==
==Exposure mode==
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